View 2SB554_7777066.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon pnp power transistors 2SB554 description with to-3 package complement to type 2sd424 high power dissipation applications for use in power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -180 v v ceo collector-emitter voltage open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -4 a p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -55~200 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB554 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -180 v v cesat collector-emitter saturation voltage i c =-10a; i b =-1a -3.0 v v be base-emitter on voltage i c =-2a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-90v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-2a ; v ce =-5v 40 140 c ob output capacitance i e =0 ; v cb =-10v;f=1.0mhz 450 pf f t transition frequency i c =-2a ; v ce =-5v 6 mhz
savantic semiconductor product specification 3 silicon pnp power transistors 2SB554 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

▲Up To Search▲

Price & Availability of 2SB554

	To Download 2SB554 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .